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Power Transistors
2SC3976
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
20.00.5
Unit: mm
3.30.2 5.00.3 3.0
6.0
s Features
q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25C)
Ratings 800 800 500 8 25 12 6 150 3.5 150 -55 to +150 Unit V V V V A A A W C C
26.00.5
10.0
1.5
2.0
4.0
1.5
20.00.5 2.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg
2.00.3 3.00.3 1.00.2
2.70.3
0.60.2 5.450.3 10.90.5
1
2
3
1:Base 2:Collector 3:Emitter TOP-3L Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 7A IC = 7A, IB = 1.4A IC = 7A, IB = 1.4A VCE = 10V, IC = 1A, f = 1MHz IC = 7A, IB1 = 1.4A, IB2 = -2.8A, VCC = 200V 15 1.0 3.0 0.3 500 15 8 1.0 1.5 V V MHz s s s min typ max 100 100 Unit A A V
2.0
1.5
3.0
1
Power Transistors
PC -- Ta
200 24 TC=25C (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3.5W)
2SC3976
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=5 30 10 3 1 0.3 25C 0.1 -25C 0.03 0.01 0.1 TC=100C
VCE(sat) -- IC
Collector power dissipation PC (W)
20
150
Collector current IC (A)
(1)
16
IB=700mA 600mA 500mA 400mA 300mA 200mA 100mA
100
12
8
50
4 (2) 0 0 20 40 60 80 100 120 140 160 (3) 0 0 2 4 6 8 10 12
0.3
1
3
10
30
100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100
hFE -- IC
IC/IB=5 1000 VCE=5V 100
fT -- IC
VCE=10V f=1MHz TC=25C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
30
300
Transition frequency fT (MHz)
10 30 100
30
10
100
10
3
30
TC=100C -25C
3
1
TC=-25C 100C 25C
10
25C
1
0.3
3
0.3
0.1 0.1
0.3
1
3
10
30
100
1 0.1
0.3
1
3
0.1 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob -- VCB
10000 100 IE=0 f=1MHz TC=25C 30
ton, tstg, tf -- IC
Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=200V TC=25C tstg
Area of safe operation (ASO)
100 30 ICP IC 10 10ms 3 1 0.3 0.1 0.03 0.01 DC Non repetitive pulse TC=25C t=0.5ms 1ms
Collector output capacitance Cob (pF)
Switching time ton,tstg,tf (s)
3000
10 3 1
1000
300
ton 0.3 tf 0.1 0.03
100
30
10 1 3 10 30 100
0.01 0 5 10 15 20
Collector current IC (A)
1
3
10
30
100
300
1000
Collector to base voltage VCB (V)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Area of safe operation, reverse bias ASO
16 14 Lcoil=30H IC/IB=5 (IB1=-IB2) TC100C
2SC3976
Reverse bias ASO measuring circuit
L coil IB1 Vin T.U.T IC
Collector current IC (A)
12 10 8 6 4 2 0 0
ICP
-IB2
VCC
tW
Vclamp
100 200 300 400 500 600 700 800
Collector to emitter voltage VCE (V)
Rth(t) -- t
10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink
Thermal resistance Rth(t) (C/W)
1000
100 (1) 10 (2)
1
0.1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3

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